Semiconductor device comprising a capacitor

ABSTRACT

A capacitor includes a case including a capacitor element, a first connection terminal, a second connection terminal, and a second insulating sheet formed between the first connection terminal and the second connection terminal, and the first connection terminal, the second insulating sheet, and the second connection terminal extend to the outside from the case. A semiconductor module includes a multi-layer terminal portion in which a first power terminal, a first insulating sheet, and a second power terminal are sequentially stacked. The first power terminal includes a first bonding area electrically connected to the first connection terminal, and the second power terminal includes a second bonding area electrically connected to the second connection terminal. The first insulating sheet includes a terrace portion that extends in a direction from the second bonding area towards the first bonding area in a planar view.

CROSS-REFERENCE TO RELATED APPLICATION

This is a continuation application of U.S. application Ser. No.17/107,552 filed on Nov. 30, 2020 and U.S. Pat. No. 11,410,922 to beissued on Aug. 9, 2022, which is based upon and claims the benefit ofpriority of the prior Japanese Patent Application No. 2019-237613, filedon Dec. 27, 2019, the entire contents of which are incorporated hereinby reference.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The embodiments discussed herein relate to a semiconductor device.

2. Background of the Related Art

There is a semiconductor device that includes a semiconductor module anda capacitor. The semiconductor module and the capacitor are electricallyconnected to each other. The semiconductor module includes power devicesand has a power conversion function, for example. The power devices areIGBTs (Insulated Gate Bipolar Transistors) or MOSFETs (Metal OxideSemiconductor Field Effect Transistors), for example. In such asemiconductor device, P and N terminals of a semiconductor module and Pand N terminals of a capacitor are connected to each other; a bus bar.This connection has conventionally been made by screwing, to facilitatethe connection process. However, if this connection method is used, thelength of an individual wiring between the semiconductor module and thecapacitor could be extended, and the inductance could be increased as aresult. There has been proposed a connection method that achieves theconnection more easily without using screws and reduces the inductance(see, for example, Japanese Laid-open Patent Publication No.2007-234694).

According to Japanese Laid-open Patent Publication No. 2007-234694,reduction of the inductance is expected by the connection mechanism onthe semiconductor module side. However, this publication discusses nospecific connection mechanism on the capacitor side. Thus, not muchreduction of the inductance is expected. Namely, it is thought that theeffect of the reduction of the inductance is small as the entiresemiconductor device.

SUMMARY OF THE INVENTION

In one aspect of the embodiments, there is provided a semiconductordevice including a capacitor including a case having a capacitor elementtherein, and a first connection terminal, a second connection terminaland a flexible insulating member disposed between the first connectionterminal and the second connection terminal, wherein the firstconnection terminal, the flexible insulating member, and the secondconnection terminal extend outside the case from inside; and asemiconductor module including a multi-layer terminal portion in which afirst power terminal, a first insulating member, and a second powerterminal are sequentially stacked, wherein the first power terminalincludes a first bonding area electrically connected to the firstconnection terminal, the second power terminal includes a second bondingarea electrically connected to the second connection terminal, the firstbonding area being apart from the second bonding area in a plan view ofthe semiconductor device, and the first insulating member includes aterrace portion extending from the second bonding area toward the firstbonding area in the plan view.

The object and advantages of the invention will be realized and attainedby means of the elements and combinations particularly pointed out inthe claims.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory and arenot restrictive of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a semiconductor device according to a firstembodiment;

FIG. 2 illustrates a semiconductor module according to the firstembodiment;

FIG. 3 illustrates an equivalent circuit configured by the semiconductormodule of the semiconductor device according to the first embodiment;

FIGS. 4A and 4B illustrate a capacitor according to the firstembodiment;

FIG. 5 is a sectional view illustrating a connection mechanism includedin the semiconductor device according to the first embodiment;

FIG. 6 is a sectional view illustrating a connection method of thesemiconductor device according to the first embodiment;

FIG. 7 is a perspective view illustrating the connection method of thesemiconductor device according to the first embodiment;

FIG. 8 is another sectional view illustrating the connection method ofthe semiconductor device according to the first embodiment;

FIG. 9 is another perspective view illustrating the connection method ofthe semiconductor device according to the first embodiment;

FIG. 10 is a sectional view illustrating a connection mechanism includedin a semiconductor device according to a second embodiment;

FIG. 11 is a sectional view illustrating a connection mechanism includedin a semiconductor device according to a third embodiment; and

FIG. 12 is a sectional view illustrating a connection mechanism includedin a semiconductor device according to a fourth embodiment.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, embodiments will be described with reference to theaccompanying drawings. In the following description, regarding asemiconductor device 10 in FIG. 1 , terms “front surface” and “topsurface” each mean a surface facing upwards. Likewise, regarding thesemiconductor device 10 in FIG. 1 , a term “up” means an upwarddirection. In addition, regarding a semiconductor device 10 in FIG. 1 ,terms “rear surface” and “bottom surface” each mean a surface facingdownwards. Likewise, regarding the semiconductor device 10 in FIG. 1 , aterm “down” means a downward direction. In the drawings other than FIG.1 , the above terms mean their respective directions, as needed. Theterms “front surface”, “top surface”, “up”, “rear surface”, “bottomsurface”, “down”, and “side surface” are only expressions used for thepurpose of convenience to determine a relative positional relationshipand do not limit the technical concept of the embodiments. For example,the terms “up” and “down” do not necessarily mean a vertical directionwith respect to the ground. Namely, the directions expressed by “up” and“down” are not limited to the directions relating to the gravity.

First Embodiment

A semiconductor device according to a first embodiment will be describedwith reference to FIG. 1 . FIG. 1 illustrates a semiconductor deviceaccording to the first embodiment. This semiconductor device 10 includesa semiconductor module 20 and a capacitor 30. In FIG. 1 , thesemiconductor module 20 and the capacitor 30 are disposed as close toeach other as possible so that their sides face each other. Couplingmembers 40 a, 40 b, and 40 c electrically and physically connect, andmechanically couple the semiconductor module 20 and the capacitor 30with each other. Each of these coupling members 40 a, 40 b, and 40 c hasa linear laser welding mark 44 a on its edge close to the capacitor 30and a linear laser welding mark 44 b on its edge close to thesemiconductor module 20. These laser welding marks 44 a and 44 b will bedescribed below. The number of coupling members 40 a, 40 b, 40 c and thewidth thereof are only examples. The number of coupling members 40 a, 40b, 40 c and the width thereof are selected based on the number ofmulti-layer terminal portions 25 a, 25 b, and 25 c (which will bedescribed below) and the width thereof included in the semiconductormodule 20. Hereinafter, when the coupling members 40 a, 40 b, and 40 cdo not need to be distinguished from each other, any one of the couplingmembers will simply be referred to as a coupling member 40, as needed.Likewise, when the multi-layer terminal portions 25 a, 25 b, and 25 c donot need to be distinguished from each other, any one of the multi-layerterminal portions will simply be referred to as a multi-layer terminalportion 25, as needed.

Next, the semiconductor module 20 included in the semiconductor device10 will be described with reference to FIGS. 2 and 3 . FIG. 2illustrates the semiconductor module according to the first embodiment,and FIG. 3 illustrates an equivalent circuit configured by thesemiconductor module of the semiconductor device according to the firstembodiment.

The semiconductor module 20 includes semiconductor units (notillustrated) and a case 21 in which the semiconductor units are stored.Each of the semiconductor units includes a ceramic circuit board and asemiconductor chip formed on the ceramic circuit board. The ceramiccircuit board includes an insulating plate, a heat radiation plateformed on the rear surface of the insulating plate, and a circuitpattern formed on the front surface of the insulating plate. Theinsulating plate is made of ceramic material having excellent thermalconductivity. Examples of this ceramic material include aluminum oxide,aluminum nitride, and silicon nitride having high-temperatureconductivity. The heat radiation plate is made of metal material havingexcellent thermal conductivity. Examples of the metal material includealuminum, iron, silver, copper, and an alloy containing at least onekind of these elements. The circuit pattern is made of metal materialhaving excellent electrical conductivity. Examples of the metal materialinclude copper and a copper alloy. The number of circuit patterns andthe shape thereof are suitably selected based on the specifications ofthe semiconductor module 20, for example. For example, a DCB (DirectCopper Bonding) substrate or an AMB (Active Metal Brazed) substrate maybe used as the ceramic circuit board having the above configuration.

The semiconductor chip is made of silicon or silicon carbide andincludes, for example, a switching element such as an IGBT or a powerMOSFET. This semiconductor chip includes, for example, a drain electrode(or a collector diode) as a main electrode on its rear surface and agate electrode and a source electrode (or an emitter electrode) as mainelectrodes on its front surface. As needed, the semiconductor chipincludes, for example, a freewheeling diode (FWD) such as a Schottkybarrier diode (SBD) or a P-intrinsic-N (PiN) diode. This semiconductorchip includes a cathode electrode as a main electrode on its rearsurface and an anode electrode as a main electrode on its front surface.Alternatively, an RC (Reverse-Conducting)-IGBT having functions of bothan IGBT and an FWD may be used as the semiconductor chip. The number ofsemiconductor chips and the kind thereof are also suitably selectedbased on the specifications of the semiconductor module 20.

The case 21 includes storage areas 21 c 1, 21 c 2, and 21 c 3. Inaddition, the case 21 includes first power terminals 22 a, 22 b, and 22c, first insulating sheets (first insulating member) 23 a, 23 b, and 23c, and second power terminals 24 a, 24 b, and 24 c. In addition, thecase 21 includes a U terminal 27 a, a V terminal 27 b, and a W terminal27 c. This case 21 is formed by injection molding using thermal flexibleresin. In addition, control terminals 26 a, 26 b, and 26 c are attachedto side portions of the storage areas 21 c 1, 21 c 2, and 21 c 3 of thecase 21 (in parallel with the lateral direction of the case 21),respectively. For example, the thermal flexible resin ispolyphenylenesulfide (PPS), polybutyleneterephthalate (PBT) resin,polybutylene succinate (PBS) resin, polyamide (PA) resin, oracrylonitrile butadiene styrene (ABS) resin. The control terminals 26 a,26 b, and 26 c are also formed by injection molding using thermalflexible resin, including predetermined terminals. When the storageareas 21 c 1, 21 c 2, and 21 c 3 do not need to be distinguished fromeach other, any one of these storage areas will simply be referred to asa storage areas 21 c. Likewise, when the first power terminals 22 a, 22b, and 22 c do not need to be distinguished from each other, any one ofthese first power terminals will simply be referred to as a first powerterminal 22. Likewise, when the second power terminals 24 a, 24 b, and24 c do not need to be distinguished from each other, any one of thesecond power terminals will simply be referred to as a second powerterminal 24. Likewise, the first insulating sheets 23 a, 23 b, and 23 cto be described below will simply be referred to as a first insulatingsheet 23.

Each of the storage areas 21 c 1, 21 c 2, and 21 c 3 is a space formedin the middle portion of the case 21 in the longitudinal directionthereof in a planar view. Each of the storage areas 21 c 1, 21 c 2, and21 c 3 includes a semiconductor unit described above. The semiconductorunit inside the storage area 21 c 1 is electrically connected to thefirst power terminal 22 a, the second power terminal 24 a, and the Uterminal 27 a. The semiconductor unit inside the storage area 21 c 2 iselectrically connected to the first power terminal 22 b, the secondpower terminal 24 b, and the V terminal 27 b. The semiconductor unitinside the storage area 21 c 3 is electrically connected to the firstpower terminal 22 c, the second power terminal 24 c, and the W terminal27 c. The semiconductor units are also electrically connected to theirrespective control terminals 26 a, 26 b, and 26 c. For this electricalconnection, wiring members such as bonding wires or lead frames areused. The wiring members are made of material having excellentelectrical conductivity. Examples of the material include metal materialsuch as aluminum or copper and an alloy containing at least one kind ofthese elements. After the semiconductor units are stored in theirrespective storage areas 21 c 1, 21 c 2, and 21 c 3, the inside of eachof the storage areas 21 c 1, 21 c 2, and 21 c 3 is sealed by sealingresin, as illustrated in FIG. 2 . The sealing material includesthermosetting resin and filler included therein. Examples of thethermosetting resin include epoxy resin, phenolic resin, and maleimideresin. Examples of the filler include silicon oxide, aluminum oxide,boron nitride, and aluminum nitride.

An end portion on a front surface of the first power terminal 22 a isexposed to the outside in a terminal area 21 a 1 of the first sideportion 21 a of the case 21 in the longitudinal direction. An endportion on a front surface of the first power terminal 22 b is exposedto the outside in a terminal area 21 a 2 of the first side portion 21 aof the case 21 in the longitudinal direction. An end portion on a frontsurface of the first power terminal 22 c is exposed to the outside in aterminal area 21 a 3 of the first side portion 21 a of the case 21 inthe longitudinal direction. Another end portion of each of the firstpower terminals 22 a, 22 b, and 22 c is electrically connected to aportion corresponding to an N terminal of the correspondingsemiconductor chip inside the case 21. The end portion of each of thefirst power terminals 22 a, 22 b, and 22 c has a planar shape at leastnear the first side portion 21 a. The first power terminals 22 a, 22 b,and 22 c are made of metal material having excellent electricalconductivity. Examples of the metal material include copper and a copperalloy.

While the second power terminals 24 a, 24 b, and 24 c are formed on thefirst power terminals 22 a, 22 b, and 22 c via the first insulatingsheets 23 a, 23 b, and 23 c, the end portion of each of the first powerterminals 22 a, 22 b, and 22 c is exposed to the outside. The tipportions (terrace portions 28 a, 28 b, 28 c) of the first insulatingsheets 23 a, 23 b, and 23 c are located between the tip portions of thefirst power terminals 22 a, 22 b, and 22 c and the tip portions of thesecond power terminals 24 a, 24 b, and 24 c. In this way, the insulationbetween the first power terminals 22 a, 22 b, and 22 c and the secondpower terminals 24 a, 24 b, and 24 c is maintained. The first insulatingsheets 23 a, 23 b, and 23 c are made of insulating material havinginsulating properties. For example, insulating paper made of whollyaromatic polyamide polymer or sheet insulating material made of fluorineor polyimide resin material may be used as the insulating material. Whenthe terrace portions 28 a, 28 b, and 28 c do not need to bedistinguished from each other, any one of the terrace portions willsimply be referred to as a terrace portion 28. The end portion on thefront surface of each of the second power terminals 24 a, 24 b, and 24 cis exposed to the outside at the first side portion 21 a of the case 21in the longitudinal direction. Another end portion of each of the secondpower terminals 24 a, 24 b, and 24 c is electrically connected to aportion corresponding to a P terminal of the corresponding semiconductorchip inside the case 21. Each of the second power terminals 24 a, 24 b,and 24 c has a planar shape at least near the first side portion 21 a.The second power terminals 24 a, 24 b, and 24 c are made of metalmaterial having excellent electrical conductivity. Examples of thismetal material include copper and a copper alloy.

As described above, the first power terminals 22 a, 22 b, and 22 c, thefirst insulating sheets 23 a, 23 b, and 23 c, and the second powerterminals 24 a, 24 b, and 24 c are sequentially stacked to form themulti-layer terminal portions 25 a, 25 b, and 25 c, respectively. Theedge portions on the front surfaces of the first power terminals 22 a,22 b, and 22 c, the first insulating sheets 23 a, 23 b, and 23 c, andthe second power terminals 24 a, 24 b, and 24 c are exposed to theoutside near the first side portion 21 a. In addition, as will beillustrated in FIG. 5 , the tip portions of the first power terminals 22a, 22 b, and 22 c (the first power terminal in FIG. 5 ) are separatedfrom the tip portions of the second power terminals 24 a, 24 b, and 24 c(the second power terminal 24 in FIG. 5 ) by a predetermined distance.Consequently, the creepage distance between the first power terminals 22a, 22 b, and 22 c and the second power terminals 24 a, 24 b, and 24 c ismaintained. This distance differs depending on the withstand voltagevalue of the semiconductor device 10. The distance is, for example, 3 mmor more and 14.5 mm or less. Alternatively, the distance may be 6 mm ormore and 12.5 mm or less. Alternatively, regarding this distance, whenthe withstand voltage value is 750 V, a tolerance of 0.5 mm may be addedto 7.5 mm. When the withstand voltage value is 1,200 V, a tolerance of0.5 mm may be added to 12 mm. The tip portions of the first insulatingsheets 23 a, 23 b, and 23 c are located in this creepage distance.

An end portion of each of the control terminals 26 a, 26 b, and 26 cextends upward in FIG. 2 . In addition, another end portion of each ofthe control terminals 26 a, 26 b, and 26 c is electrically connected toa gate electrode of the semiconductor chip of the semiconductor unit inthe corresponding one of the storage areas 21 c 1, 21 c 2, and 21 c 3.The control terminals 26 a, 26 b, and 26 c are made of metal materialhaving excellent electrical conductivity. Examples of this metalmaterial include copper, a copper alloy, aluminum, and an aluminumalloy.

Another end portion of each of the U terminal 27 a, the V terminal 27 b,and the W terminal 27 c is electrically connected to a source electrode(or an emitter electrode) of the semiconductor chip of the semiconductorunit in the corresponding one of the storage areas 21 c 1, 21 c 2, and21 c 3. One end portion of each of the U terminal 27 a, the V terminal27 b, and the W terminal 27 c is exposed to the outside at a second sideportion 21 b of the case 21 in the longitudinal direction of the case21. The U terminal 27 a, the V terminal 27 b, and the W terminal 27 care made of metal material having excellent electrical conductivity.Examples of this metal material include copper and a copper alloy.

This semiconductor module 20 includes an equivalent circuit illustratedin FIG. 3 . The equivalent circuit in FIG. 3 includes switchingelements, and power MOSFETs or IGBTs may be used as the semiconductorchips. In the semiconductor device 10, the second power terminals 24 a,24 b, and 24 c functioning as P terminals are electrically connected tocollector electrodes of semiconductor chips of the semiconductor unitsin the respective storage areas 21 c 1, 21 c 2, and 21 c 3. The firstpower terminals 22 a, 22 b, and 22 c functioning as N terminals areelectrically connected to emitter electrodes of semiconductor chips ofthe semiconductor units in the respective storage areas 21 c 1, 21 c 2,and 21 c 3. The U terminal 27 a, the V terminal 27 b, and the W terminal27 c are electrically connected to the connecting points ofsemiconductor chips connected in series in the semiconductor units inthe respective storage areas 21 c 1, 21 c 2, and 21 c 3.

Next, the capacitor 30 will be described with reference to FIGS. 4A and4B. FIGS. 4A and 4B illustrate the capacitor according to the firstembodiment. FIG. 4A is a perspective view of the capacitor 30, and FIG.4B is a perspective view of the capacitor 30 seen from an oppositedirection from that in FIG. 4A. The capacitor 30 includes a case 31, afirst connection terminal 32, a second insulating sheet (flexibleinsulating member) 33, and a second connection terminal 34.

The case 31 is the main body of the capacitor. For example, the case 31holds a plurality of capacitor elements, each of which is formed bystacking and winding a pair of film dielectrics and connecting the filmdielectrics to positive and negative electrodes. Thus, the case 31maintains insulation from the capacitor elements and is made oflightweight material. This material is epoxy resin, for example. Anotherend portion of the first connection terminal 32 is electricallyconnected to the N electrodes of all the capacitor elements inside thecase 31. An end portion of the first connection terminal 32 extends tothe outside from the front surface of the case 31. This portion of thefirst connection terminal 32 extending from the case 31 has anapproximately L shape in a lateral view. The first connection terminal32 having the approximately L shape includes a first conductive portion321 and a first wiring portion 322, as will be described below withreference to FIG. 5 . Another end portion of the first conductiveportion 321 is electrically connected to the N electrodes of thecapacitor elements inside the case 31, and the first conductive portion321 vertically extends to the outside from the front surface of the case31. The first wiring portion 322 is approximately perpendicular to thefirst conductive portion 321 and extends in the direction of the thirdside portion 31 a approximately in parallel with the front surface ofthe case 31. In addition, the portion of the first connection terminal32 extending from the case 31 (the first wiring portion 322) has acomb-teeth like shape including a first connection portion 32 a, asecond connection portion 32 b, and a third connection portion 32 c in aplanar view. In FIG. 4B, the reference characters of the firstconnection portion 32 a, the second connection portion 32 b, and thethird connection portion 32 c are not illustrated. The widths of thefirst connection portion 32 a, the second connection portion 32 b, andthe third connection portion 32 c correspond to the widths of thestorage areas 21 c 1, 21 c 2, and 21 c 3 (the first power terminals 22a, 22 b, and 22 c) of the semiconductor module 20, respectively. Thefirst connection terminal 32 is made of metal material having excellentelectrical conductivity. Examples of the metal material include copperand a copper alloy.

Another end portion of the second connection terminal 34 is electricallyconnected to the P electrodes of all the capacitor elements within thecase 31. An end portion of the second connection terminal 34 extends tothe outside from the front surface of the case 31. The second connectionterminal 34 is formed with a gap from the first connection terminal 32and extends in the opposite direction of the third side portion 31 a.The portion of the second connection terminal 34 extending from the case31 has an approximately L shape in a lateral view. The second connectionterminal 34 having the approximately L shape includes a secondconductive portion 341 and a second wiring portion 342, as will bedescribed with reference to FIG. 5 . Another end portion of the secondconductive portion 341 is electrically connected to the P electrodes ofthe capacitor elements within the case 31, and the second conductiveportion 341 vertically extends to the outside from the front surface ofthe case 31. The second wiring portion 342 is approximatelyperpendicular to the second conductive portion 341 and extends to theopposite side of the third side portion 31 a approximately in parallelwith the front surface of the case 31. The second connection terminal 34is made of metal material having excellent electrical conductivity.Examples of the metal material include copper and a copper alloy.

The second insulating sheet 33 is longer than the first connectionterminal 32 and extends to the outside of the case 31 between the firstconnection terminal 32 and the second connection terminal 34. Thus,outside the case 31, the insulation between the first connectionterminal 32 and the second connection terminal 34 is maintained by thesecond insulating sheet 33. The second insulating sheet 33 is made offlexible insulating material having insulating properties. For example,insulating paper made of wholly aromatic polyamide polymer or sheetinsulating material made of fluorine or polyimide resin material may beused as the insulating material. In addition, a tip portion of thesecond insulating sheet 33 has a comb-teeth like shape including a firstattachment portion 33 a, a second attachment portion 33 b, and a thirdattachment portion 33 c in a planar view. In FIG. 4B, the referencecharacters of the first attachment portion 33 a, the second attachmentportion 33 b, and the third attachment portion 33 c are not illustrated.The widths of the first attachment portion 33 a, the second attachmentportion 33 b, and the third attachment portion 33 c correspond to thewidths of the storage areas 21 c 1, 21 c 2, and 21 c 3 (the firstinsulating sheets 23 a, 23 b, and 23 c) of the semiconductor module 20.

While not illustrated, additional terminals are formed in the case 31.These terminals have another end portion that is electrically connectedto the positive and negative terminals of all the capacitor elementsinside the case 31. These terminals have an end portion that extends tothe outside from the case 31. These terminals may extend from anylocations of the case 31, as long as the locations are different fromwhere the first connection terminal 32 and the second connectionterminal 34 extend. For example, these terminals may be formed on a sideportion opposite to the third side portion 31 a. The terminals are madeof metal material having excellent electrical conductivity. Examples ofthe metal material include copper and a copper alloy.

Next, the coupling members 40 a, 40 b, and 40 c will be described (seeFIG. 1 ). Each of the coupling members 40 a, 40 b, and 40 c has a planarshape in a planar view. The width of an end portion of each of thecoupling members 40 a, 40 b, and 40 c corresponds to the width of eachof the storage areas 21 c 1, 21 c 2, and 21 c 3 (the second powerterminals 24 a, 24 b, and 24 c) of the semiconductor module 20. Thethickness of each of the coupling members 40 a, 40 b, and 40 c is lessthan the thickness of each of the second power terminals 24 a, 24 b, and24 c. The end portion of each of the coupling members 40 a, 40 b, and 40c is bonded to the corresponding one of the second power terminals 24 a,24 b, and 24 c by laser welding. Another end portion of each of thecoupling members 40 a, 40 b, and 40 c is bonded to the second connectionterminal 34 of the capacitor 30 by seam laser. The bonding by laserwelding may be performed by seam laser in which laser light iscontinuously emitted or spot laser in which pulsed laser light isemitted. FIG. 1 illustrates a case in which the bonding is made by seamlaser. Thus, each of the coupling members 40 a, 40 b, and 40 c in FIG. 1has the linear laser welding mark 44 a near the capacitor 30 and thelinear laser welding mark 44 b near the semiconductor module 20. Thecoupling members 40 a, 40 b, and 40 c are made of metal material havingexcellent electrical conductivity. Examples of the metal materialinclude copper and a copper alloy. According to the first embodiment,the three coupling members 40 a, 40 b, and 40 c are bonded to the secondpower terminals 24 a, 24 b, and 24 c, respectively. Alternatively, as isthe case with the first connection terminal 32 and the second insulatingsheet 33, a plate-like coupling member having an end portion in acomb-teeth like shape near the semiconductor module 20 may be used. Inthis case, the end portion has segments that correspond to the secondpower terminals 24 a, 24 b, and 24 c.

Next, the connection mechanism between the semiconductor module 20 andthe capacitor 30 of the semiconductor device 10 will be described withreference to FIG. 5 . FIG. 5 is a sectional view illustrating theconnection mechanism included in the semiconductor device according tothe first embodiment. FIG. 5 is a sectional view taken along analternate long and short dash line X-X in FIG. 1 . The other couplingmembers 40 b and 40 c of the semiconductor device 10 in FIG. 1 have thesame cross section as in FIG. 5 .

In the semiconductor device 10, the first wiring portion 322 of thefirst connection terminal 32 of the capacitor 30 is bonded (physicallyconnected) to a first bonding area 221 of the individual first powerterminal 22 of the semiconductor module 20. Namely, while notillustrated, the first connection portion 32 a, the second connectionportion 32 b, and the third connection portion 32 c of the first wiringportion 322 of the first connection terminal 32 are bonded to the firstbonding areas of the first power terminals 22 a, 22 b, and 22 c of thesemiconductor module 20. The term “first bonding area 221” collectivelydenotes any one of the first bonding areas of the first power terminals22 a, 22 b, and 22 c.

The second insulating sheet 33 of the capacitor 30 bends towards thesemiconductor module 20 and extends over the first connection terminal32. The tip portion of the second insulating sheet 33 extends above theterrace portions of the first insulating sheets 23 of the semiconductormodule 20. The tip portion of the second insulating sheet 33 extends upto a location immediately before the second power terminals 24. Namely,there is a gap between the individual terrace portion 28 and the tipportion of the second insulating sheet 33 and/or between the tip portionof the second insulating sheet 33 and the individual coupling member 40.In addition, the gap from the tip of the first connection terminal 32 tothe tip of the individual second power terminal 24 is 6 mm or more and12.5 mm or less. The individual terrace portion 28 extends towards thecorresponding first bonding area 221 to be described below from thecorresponding second bonding area 241 to be described below in a planarview. In addition, while not illustrated, the first attachment portion33 a, the second attachment portion 33 b, and the third attachmentportion 33 c of the tip portion of the second insulating sheet 33 extendabove the respective first insulating sheets 23 a, 23 b, and 23 c of thesemiconductor module 20.

The front surface of the second wiring portion 342 of the secondconnection terminal 34 of the capacitor 30 and the front surface of theindividual second power terminal 24 of the semiconductor module 20 areon the same plane. In addition, an end portion of the individualcoupling member 40 is bonded to a third bonding area 343 of the secondwiring portion 342 of the second connection terminal 34 of the capacitor30, and another end portion of the individual coupling member 40 isbonded to the second bonding area 241 of the corresponding second powerterminal 24 of the semiconductor module 20. The coupling member 40 mayform a current path from the second connection terminal 34 to the secondpower terminal 24. The second bonding areas 241 and the third bondingareas 343 are located in parallel with the first bonding areas 221.While not illustrated, another end portion of each of the couplingmembers 40 a, 40 b, and 40 c is bonded to a corresponding one of thesecond bonding areas of the second power terminals 24 a, 24 b, and 24 cof the semiconductor module 20. The second bonding area 241 collectivelydenotes any one of the second bonding areas of the second powerterminals 24 a, 24 b, and 24 c. In this way, the coupling members 40electrically connect the second connection terminal 34 of the capacitor30 and the second power terminals 24 of the semiconductor module 20.There is a gap between the rear surface of the individual couplingmember 40 and the front surface of the first wiring portion 322 of thefirst connection terminal 32 of the capacitor 30. The second insulatingsheet 33 is formed in this gap. Thus, the first connection terminal 32is insulated from the coupling members 40 and the second connectionterminal 34. The configuration of the second insulating sheet 33 is notlimited to that illustrated in FIG. 5 . For example, the secondinsulating sheet 33 may be in contact with the rear surface of theindividual coupling member 40, the front surface of the first connectionterminal 32, or the tip portions of the second power terminals 24 inthis gap.

Next, a connection method of the semiconductor module 20 and thecapacitor 30 of the semiconductor device 10 will be described withreference to FIGS. 5, 6 and 9 . FIGS. 6 and 8 are each a sectional viewillustrating a connection method of the semiconductor device accordingto the first embodiment. FIGS. 7 and 9 are each a perspective viewillustrating the connection method of the semiconductor device accordingto the first embodiment. FIGS. 6 and 8 correspond to the sectional viewin FIG. 5 . FIGS. 7 and 9 are each an enlarged perspective view of theconnection between the semiconductor module 20 and the capacitor 30.

First, a tip portion of the first wiring portion 322 of the firstconnection terminal 32 of the capacitor 30 is positioned with respect tothe first power terminals 22 of the semiconductor module 20. The frontsurface of the second wiring portion 342 of the second connectionterminal 34 of the capacitor 30 and the front surfaces of the secondpower terminals 24 (the second power terminals 24 a, 24 b, and 24 c) ofthe semiconductor module 20 are on the same plane. In this state, laserwelding is performed to bond the tip portion of the first wiring portion322 to the first bonding areas 221 of the first power terminals 22 (FIG.6 ). In addition, as described above, the first wiring portion 322 has acomb-teeth like shape including the first connection portion 32 a, thesecond connection portion 32 b, and the third connection portion 32 c ina planar view. Thus, the first connection portion 32 a, the secondconnection portion 32 b, and the third connection portion 32 c of thefirst wiring portion 322 are bonded to the first bonding areas of thefirst power terminals 22 a, 22 b, and 22 c in the terminal areas 21 a 1,21 a 2, and 21 a 3, respectively (FIG. 7 ). Since located behind thefirst connection portion 32 a, the second connection portion 32 b, andthe third connection portion 32 c, the first power terminals 22 a, 22 b,and 22 c are not illustrated in FIG. 7 . In addition, in FIG. 7 , alaser welding mark 44 c is formed on each of the first connectionportion 32 a, the second connection portion 32 b, and the thirdconnection portion 32 c of the first connection terminal 32. These laserwelding marks 44 c are also formed by seam laser or spot laser. FIG. 7illustrates a case in which the bonding is made by seam laser.

Next, the second insulating sheet 33 of the capacitor 30 is bent towardsthe semiconductor module 20. Being flexible, the second insulating sheet33 may be bent at once. After bent, the tip portion of the secondinsulating sheet 33 is located above the terrace portions 28 of thefirst insulating sheets 23 exposed to the outside between the firstpower terminals 22 and the second power terminals 24 of thesemiconductor module 20 (FIG. 8 ). The bent second insulating sheet 33may be in contact with the first power terminals 22, the firstinsulating sheets 23, or the second power terminals 24. In addition, asdescribed above, the tip portion of the second insulating sheet 33 has acomb-teeth like shape including the first attachment portion 33 a, thesecond attachment portion 33 b, and the third attachment portion 33 c ina planar view. Thus, the first attachment portion 33 a, the secondattachment portion 33 b, and the third attachment portion 33 c of thesecond insulating sheet 33 cover the first insulating sheets 23 a, 23 b,and 23 c, respectively (FIG. 9 ). Since located behind the firstattachment portion 33 a, the second attachment portion 33 b, and thethird attachment portion 33 c of the second insulating sheet 33, thefirst insulating sheets 23 a, 23 b, and 23 c are not illustrated in FIG.9 .

Next, one end portion of the individual coupling member 40 is set on thefront surface of the second wiring portion 342 of the second connectionterminal 34 of the capacitor 30, and another end portion of theindividual coupling member 40 is set on the front surface of thecorresponding second power terminal 24 of the semiconductor module 20.Next, laser welding is performed to bond the one end portion of theindividual coupling member 40 to the front surface of the correspondingsecond wiring portion 342 of the capacitor 30 and to bond the other endportion of the individual coupling member 40 to the front surface of thecorresponding second power terminal 24 of the semiconductor module 20(FIG. 5 ). Since the thickness of the individual coupling member 40 isless than the thickness of the individual second power terminal 24, thelaser welding is performed more effectively. These coupling members 40a, 40 b, and 40 c are bonded to the second power terminals 24 a, 24 b,and 24 c of the semiconductor module 20, respectively. The couplingmembers 40 a, 40 b, and 40 c are also bonded to the second wiringportion 342 of the second connection terminal of the capacitor 30 (FIG.1 ). In this way, the semiconductor device 10 in which semiconductormodule 20 and the capacitor 30 are coupled to each other is obtained.

The semiconductor device 10 includes the semiconductor module 20 and thecapacitor 30. The capacitor includes the case 31 including capacitorelements, the first connection terminal 32, the second connectionterminal 34, and the second insulating sheet 33 formed between the firstconnection terminal 32 and the second connection terminal 34. The firstconnection terminal 32, the second insulating sheet 33, and the secondconnection terminal 34 extend to the outside from the case 31. Thesemiconductor module 20 includes the multi-layer terminal portions 25,each of which is formed by sequentially stacking the first powerterminal 22, the first insulating sheet 23, and the second powerterminal 24. The individual first power terminal 22 includes a firstbonding area 221 electrically connected to the first connection terminal32, and the individual second power terminal 24 includes a secondbonding area 241 electrically connected to the second connectionterminal 34 via the individual coupling member 40. The individual firstinsulating sheet 23 has a terrace portion 28 that extends in a directionfrom the corresponding second bonding area 241 (the second powerterminal 24) towards the corresponding first bonding area 221 in aplanar view.

The semiconductor module 20 and the capacitor 30 of the semiconductordevice 10 are connected as close to each other as possible by thecoupling members 40 and the first connection terminal 32. Thus, thelength of an individual wiring between the semiconductor module 20 andthe capacitor is also as short as possible. Consequently, the inductanceof the semiconductor device 10 is reduced. In addition, in accordancewith this connection, the first connection terminal 32 and the couplingmembers 40 are arranged in parallel with each other. In this way, sincethe direction of the current flowing through the first connectionterminal 32 is opposite to that of the current flowing through theindividual coupling member 40, the magnetic field formed by thesecurrents are offset. Thus, the inductance of the semiconductor device 10is further reduced. Thus, compared with a case in which thesemiconductor module 20 and the capacitor 30 of the semiconductor device10 are connected to each other simply by screwing, the inductance isreduced more significantly.

Second Embodiment

A second embodiment will be described with reference to FIG. 10 .According to the second embodiment, a semiconductor module and acapacitor are connected to each other by a connection mechanismdifferent from that according to the first embodiment. FIG. 10 is asectional view illustrating a connection mechanism included in asemiconductor device according to the second embodiment. FIG. 10corresponds to the sectional view of the semiconductor device in FIG. 5according to the first embodiment. According to the second embodiment,portions that are equivalent to those of the semiconductor device 10according to the first embodiment will be denoted by the same referencecharacters, and description of these equivalent portions will besimplified or omitted.

This semiconductor device 10 a includes a semiconductor module 20 and acapacitor 30 a. The capacitor 30 a includes a first connection terminal32, a second insulating sheet 33, and a second connection terminal 34 a.The second connection terminal 34 a includes a second conductive portion341 and a second wiring portion 342 a. The second wiring portion 342 aof the capacitor 30 a extends in parallel with a first wiring portion322 of the first connection terminal 32 towards a third side portion 31a. In addition, the second wiring portion 342 a is bonded to anindividual second power terminal 24 of the semiconductor module 20.Namely, the second connection terminal 34 a of the capacitor 30 a isdirectly bonded to the individual second power terminal 24 of thesemiconductor module 20, without using the coupling members 40 accordingto the first embodiment. The second wiring portion 342 a of the secondconnection terminal 34 a has a comb-teeth like shape having segments ina planar view, as is the case with the first connection terminal 32. Thetip portions of the comb-teeth like shape of the second wiring portion342 a of the second connection terminal 34 a are bonded to secondbonding areas of second power terminals 24 a, 24 b, and 24 c of thesemiconductor module 20. Namely, the second connection terminal 34 a isbonded to a second bonding area 241 of the individual second powerterminal 24 of the semiconductor module 20 as described above. Thus, thethickness of the second connection terminal 34 a is less than that ofthe individual second power terminal 24. Thus, the second connectionterminal 34 a is effectively bonded to the second bonding area 241 ofthe individual second power terminal 24 by laser welding. The secondembodiment assumes that the first connection terminal 32, the secondconnection terminal 34 a, and the second insulating sheet 33 extend fromthe front surface of the case 31. However, alternatively, the firstconnection terminal 32, the second connection terminal 34 a, and thesecond insulating sheet 33 may extend from the third side portion 31 aof the case 31. In this case, the first connection terminal 32 and thesecond connection terminal 34 a have a planar shape, instead of anapproximately L shape. The second insulating sheet 33 extends inparallel with the planar first connection terminal 32 and secondconnection terminal 34 a without being bent.

The semiconductor module 20 and the capacitor 30 a of the semiconductordevice 10 a are also connected to as close to each other as possible bythe first connection terminal 32 and the second connection terminal 34a. Thus, the length of an individual wiring between the semiconductormodule 20 and the capacitor 30 a is also as short as possible.Consequently, the inductance of the semiconductor device 10 a isreduced. In addition, in accordance with this connection, the firstconnection terminal 32 and the second connection terminal 34 a areformed in parallel with each other. In this way, since the direction ofthe current flowing through the first connection terminal 32 is oppositeto that of the current flowing through the second connection terminal 34a, the magnetic field formed by these currents are offset. Thus, theinductance of the semiconductor device 10 a is further reduced, andreduction of the reliability of the semiconductor device 10 a isprevented. In addition, the semiconductor module 20 and the capacitor 30a of the semiconductor device 10 a are connected to each other withoutusing the coupling members 40 of the semiconductor device 10. Thus, thenumber of parts used is reduced, and the process of bonding the couplingmembers 40 is eliminated. Therefore, increase in the manufacturing costof the semiconductor device 10 a is prevented.

Third Embodiment

A third embodiment will be described with reference to FIG. 11 .According to the third embodiment, a semiconductor module and acapacitor are connected to each other by a connection mechanismdifferent from those according to the first and second embodiments. FIG.11 is a sectional view illustrating a connection mechanism included in asemiconductor device according to the third embodiment. FIG. 11corresponds to the sectional view of the semiconductor device in FIG. 5according to the first embodiment. According to the third embodiment,portions that are equivalent to those of the semiconductor device 10 or10 a according to the first or second embodiment will be denoted by thesame reference characters, and description of these equivalent portionswill be simplified or omitted.

This semiconductor device 10 b includes a semiconductor module 20 and acapacitor 30 b. The capacitor 30 b includes a first connection terminal32, a second insulating sheet 133, and a second connection terminal 34b. The second connection terminal 34 b has a second conductive portion341 and a second wiring portion 342 b. The second wiring portion 342 bof the capacitor 30 b extends towards a third side portion 31 a inparallel with a first wiring portion 322 of the first connectionterminal 32. The second wiring portion 342 b does not reach the plane ofthe third side portion 31 a. In addition, the front surface of thesecond wiring portion 342 b of the second connection terminal 34 b andthe front surface of an individual second power terminal 24 of thesemiconductor module 20 are formed on the same plane. An end portion ofan individual coupling member 40 is bonded to a corresponding secondbonding area 241 on the front surface of the corresponding second powerterminal 24, and another end portion of the individual coupling member40 is bonded to a third bonding area 343 on the front surface of thesecond wiring portion 342 b. In this way, the semiconductor module 20and the capacitor 30 b are electrically connected to each other.

In addition, the second insulating sheet 133 extends between the firstconnection terminal 32 and the second connection terminal 34 b of thecase 31. In FIG. 11 , the second insulating sheet 133 extends above thefront surface of the first connection terminal 32, and a tip portion ofthe second insulating sheet 133 is located between a tip portion of thefirst connection terminal 32 and a tip portion of the second connectionterminal 34 b. As a result, the insulation between the first connectionterminal 32 and the second connection terminal 34 b is maintained. A gapis formed between the front surface of the first wiring portion 322 ofthe first connection terminal 32 and the rear surface of the individualcoupling member 40. In addition, a third insulating sheet (secondinsulating member) 41 is arranged in this gap. Namely, the thirdinsulating sheet 41 is arranged between the tip portion of the secondinsulating sheet 133 located between the tip portion of the firstconnection terminal 32 and the tip portion of the second connectionterminal 34 b and tip portions of first insulating sheets 23. The thirdinsulating sheet 41 is made of the same material as that of the secondinsulating sheet 133. In addition, an end portion of the thirdinsulating sheet 41 is bonded to terrace portions 28 of the firstinsulating sheets 23, and another end portion of the third insulatingsheet 41 is bonded to the tip portion of the second insulating sheet133. Known adhesive is used for this bonding. The third insulating sheet41 has an end portion near the semiconductor module 20, and this endportion has a comb-teeth like shape corresponding to storage areas 21 c1, 21 c 2, and 21 c 3 of the semiconductor module 20 in a planar view.The third insulating sheet 41 has an end portion near the capacitor 30b, and this end portion has the same width as or a larger width thanthat of the second insulating sheet 133 in a planar view. The firstconnection terminal 32 is insulated from the second connection terminal34 b, the coupling members 40, and the second power terminals 24 by thesecond insulating sheet 133 and the third insulating sheet 41. Thesecond insulating sheet 133 may be formed to cover the first connectionterminal 32 and extend up to the first insulating sheet 23, as is thecase with the second insulating sheet 33 in FIGS. 5 and 10 . In thiscase, the end portion of the second insulating sheet 133, the endportion being near the semiconductor module 20, is formed to have acomb-teeth like shape, as is the case with the second insulating sheet33 in FIGS. 5 and 10 . In addition, in this case, the third insulatingsheet 41 is not needed.

The semiconductor module 20 and the capacitor 30 b of the semiconductordevice 10 b are connected as close to each other as possible by thefirst connection terminal 32 and the coupling members 40. Thus, thelength of an individual wiring between the semiconductor module 20 andthe capacitor 30 b is also as short as possible. Consequently, theinductance of the semiconductor device 10 b is reduced. In addition, inaccordance with this connection, the first connection terminal 32 andthe coupling members 40 are arranged in parallel with each other. Inthis way, since the direction of the current flowing through the firstconnection terminal 32 is opposite to that of the current flowingthrough the individual coupling member 40, the magnetic field formed bythese currents are offset. Thus, the inductance of the semiconductordevice 10 b is further reduced.

Fourth Embodiment

A fourth embodiment will be described with reference to FIG. 12 .According to the fourth embodiment, a semiconductor module and acapacitor are connected to each other by a connection mechanismdifferent from those according to the first to third embodiments. FIG.12 is a sectional view illustrating a connection mechanism included in asemiconductor device according to the fourth embodiment. FIG. 12corresponds to the sectional view of the semiconductor device in FIG. 5according to the first embodiment. According to the fourth embodiment,portions that are equivalent to those of the semiconductor device 10, 10a, or 10 b according to the first, second, or third embodiment will bedenoted by the same reference characters, and description of theseequivalent portions will be simplified or omitted.

This semiconductor device 10 c includes a semiconductor module 20 and acapacitor 30 c. The capacitor 30 c includes a first connection terminal132, a second insulating sheet 233, and a second connection terminal 34c. The first connection terminal 132 has a first conductive portion 321and a first wiring portion 322 a. The first wiring portion 322 a extendstowards a third side portion 31 a in parallel with the front surface ofa case 31. The first wiring portion 322 a extends up to a locationslightly beyond the third side portion 31 a. In addition, the firstwiring portion 322 a of the first connection terminal 132 has acomb-teeth like shape in a planar view, as is the case with the firstconnection terminal 32. The second connection terminal 34 c extendsupwards from the front surface of the case 31. A tip of the secondconnection terminal 34 c and the front surface of an individual secondpower terminal 24 of the semiconductor module 20 are on the same plane.In addition, a coupling member 43 is formed between the third sideportion 31 a of the case 31 of the capacitor 30 c and an individualfirst power terminal 22 of the semiconductor module 20 of thesemiconductor device 10 c. The rear surface of an end portion of theindividual coupling member 43 is electrically connected to a firstbonding area 221 of the individual first power terminal 22. The frontsurface of another end portion of the coupling member 43 is electricallyconnected to the rear surface of the first wiring portion 322 a of thefirst connection terminal 132. In addition, the coupling member 43 isconnected to first power terminals 22 a, 22 b, and 22 c of thesemiconductor module 20.

In addition, the second insulating sheet 233 extends between the firstconnection terminal 132 and the second connection terminal 34 c of thecase 31, convers the first connection terminal 132 and the couplingmember 43, and is connected to terrace portions 28 of first insulatingsheets 23 of the semiconductor module 20. Thus, the insulation betweenthe second connection terminal 34 c and the first connection terminal132 is maintained.

An individual coupling member 42 has an approximately L shape in alateral view and has an engaging portion 42 a and a third wiring portion42 b. The rear surface of an end portion of the third wiring portion 42b of the coupling member 42 is bonded to a second bonding area 241 onthe front surface of a corresponding individual second power terminal 24of the semiconductor module 20. The engaging portion 42 a of theindividual coupling member 42 is hung over (engaged with) the secondconnection terminal 34 c of the capacitor 30 c and is bonded to a fourthbonding area 344 on a side portion (the left portion in FIG. 12 ) of thesecond connection terminal 34 c. These coupling members 42 electricallyconnect the second power terminals 24 of the semiconductor module 20 andthe second connection terminal 34 c of the capacitor 30 c. In addition,each of these coupling members 42 is provided for a corresponding one ofthe second power terminals 24 a, 24 b, and 24 c of the semiconductormodule 20. A gap is formed between the rear surface of the individualcoupling member 42 (the third wiring portion 42 b) and the front surfaceof first connection terminal 132 and the front surface of the individualcoupling member 43. The second insulating sheet 233 is disposed in thisgap. Thus, the insulation between a coupling member 42 and acorresponding combination of the first connection terminal 132 and thecoupling members 43 is maintained. In addition, the insulation between asecond power terminal 24 and a corresponding combination of the firstconnection terminal 132 and the coupling member 43 is maintained.

The semiconductor module 20 and the capacitor 30 c of the semiconductordevice 10 c are also connected as close to each other as possible by thefirst connection terminal 132, the coupling members 43, and the couplingmembers 42. In particular, the individual coupling member 42 is shorterthan the individual coupling member 40 according to the firstembodiment. Thus, the length of an individual wiring between thesemiconductor module 20 and the capacitor 30 c is also as short aspossible. Consequently, the inductance of the semiconductor device 10 cis further reduced. In addition, in accordance with this connection, thefirst connection terminal 132, the coupling members 43, and the couplingmembers 42 are arranged in parallel with each other. In this way, sincethe direction of the current flowing through the first connectionterminal 132 and the coupling members 43 is made opposite to the currentflowing through the coupling members 42, the magnetic field formed bythese currents are offset. Thus, the inductance of the semiconductordevice 10 c is further reduced.

According to the embodiments discussed above, the inductance between asemiconductor module and a capacitor is reduced.

All examples and conditional language provided herein are intended forthe pedagogical purposes of aiding the reader in understanding theinvention and the concepts contributed by the inventor to further theart, and are not to be construed as limitations to such specificallyrecited examples and conditions, nor does the organization of suchexamples in the specification relate to a showing of the superiority andinferiority of the invention. Although one or more embodiments of thepresent invention have been described in detail, it should be understoodthat various changes, substitutions, and alterations could be madehereto without departing from the spirit and scope of the invention.

What is claimed is:
 1. A semiconductor device, comprising: a capacitorincluding a first connection terminal and a second connection terminal,wherein the first connection terminal and the second connection terminalextend to an outside; and a semiconductor module including a multi-layerterminal portion in which a first power terminal, a first insulatingmember, and a second power terminal are sequentially stacked, themulti-layer terminal portion being at least partially exposed to theoutside, wherein the first power terminal includes a first bonding areaelectrically connected to the first connection terminal, the secondpower terminal includes a second bonding area electrically connected tothe second connection terminal, the first insulating member includes aterrace portion extending from an end portion of the second powerterminal toward the first connection terminal, the first connectionterminal is electrically and physically connected to the first powerterminal at a position where a first laser welding mark is located, andthe second connection terminal is electrically and physically connectedto the second power terminal at a position where a second laser weldingmark is located.
 2. The semiconductor device according to claim 1,wherein the terrace portion extends from the second bonding area to thefirst bonding area in a plan view of the semiconductor device.
 3. Thesemiconductor device according to claim 1, further comprising a couplingmember that at least partially contacts the second connection terminaland is electrically and physically connected to the second powerterminal at the position where the second laser welding mark is located.4. The semiconductor device according to claim 1, further comprising acoupling member, wherein the coupling member is electrically andphysically connected to the second power terminal at the position wherethe second laser welding mark is located, and is electrically andphysically connected to the second connection terminal at a positionwhere a third laser welding mark is located, and the second connectionterminal is electrically and physically connected to the second powerterminal via the coupling member.
 5. The semiconductor device accordingto claim 3, wherein a thickness of the coupling member is less than athickness of the second power terminal.
 6. The semiconductor deviceaccording to claim 1, wherein both the first bonding area and the secondbonding area are flat.
 7. The semiconductor device according to claim 1,wherein the multi-layer terminal portion is disposed on one end of thesemiconductor module in a plan view of the semiconductor device.
 8. Thesemiconductor device according to claim 1, wherein the semiconductormodule further includes a case that covers a rear surface of the firstpower terminal opposite to a front surface of the first power terminalthat has the first laser welding mark.
 9. The semiconductor deviceaccording to claim 1, wherein bottoms of the first laser welding markand the second laser welding mark do not reach rear surfaces of thefirst power terminal and the second power terminal, respectively. 10.The semiconductor device according to claim 1, wherein the first laserwelding mark and the second laser welding mark are both linear in a planview of the semiconductor device.
 11. The semiconductor device accordingto claim 1, wherein a creepage distance between a tip surface of thefirst power terminal and a tip surface of the second power terminal isin the range of 3 mm to 14.5 mm, inclusive.
 12. The semiconductor deviceaccording to claim 1, wherein a creepage distance between a tip surfaceof the first power terminal and a tip surface of the second powerterminal is in the range of 6 mm to 12.5 mm, inclusive.
 13. Thesemiconductor device according to claim 1, further comprising a secondinsulating member including a rising portion rising from the terraceportion in a height direction of the second power terminal.
 14. Thesemiconductor device according to claim 13, wherein the rising portionof the second insulating member faces a tip surface of the second powerterminal.
 15. The semiconductor device according to claim 1, furthercomprising a second insulating member between the first connectionterminal and the second connection terminal, wherein the secondinsulating member overlaps the terrace portion in a plan view of thesemiconductor device.
 16. A method of manufacturing a semiconductordevice, comprising preparing a capacitor including a first connectionterminal and a second connection terminal, wherein the first connectionterminal and the second connection terminal extend to an outside;preparing a semiconductor module including a multi-layer terminalportion in which a first power terminal, a first insulating member, anda second power terminal are sequentially stacked, the multi-layerterminal portion being at least partially exposed to the outside, thefirst insulating member including a terrace portion extending from anend portion of the second power terminal toward the first connectionterminal; and electrically and physically connecting the firstconnection terminal to the first power terminal by laser welding. 17.The method of manufacturing the semiconductor device according to claim16, further comprising electrically and physically connecting the secondconnection terminal to the second power terminal by the laser welding.18. The method of manufacturing the semiconductor device according toclaim 16, further comprising electrically and physically connecting acoupling member to both the second connection terminal and the secondpower terminal by the laser welding.
 19. The method of manufacturing thesemiconductor device according to claim 16, wherein the capacitorfurther includes a second insulating member between the first connectionterminal and the second connection terminal, and the method furtherincludes arranging the second insulating member such that the secondinsulating member overlaps the terrace portion in a plan view of thesemiconductor device.
 20. The semiconductor device manufacturing methodaccording to claim 16, wherein the laser welding is performed by seamlaser or spot laser.